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1SS373

Part Number	1SS373
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward ...
Datasheet	1SS373 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Small package Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA 1SS373 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 Reverse voltage VR 10 Maximum (peak) forward current IFM 200 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P * 150 Junction temperature Tj 125 Storage temperature range Tstg −55∼125 Operating temperature range Topr −40∼100 * Mounted on a glass epoxy circuit board of 20 × 20 mm Pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C) V V mA mA A mW °...

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