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1SS372

Part Number	1SS372
Manufacturer	Toshiba Semiconductor
Description	Silicon Epitaxial Schottky Barrie Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small ...
Datasheet	1SS372 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small package z Low forward voltage: VF = 0.
23V (typ.
) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 100 mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/c...

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