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1SS370

Toshiba Semiconductor
Part Number 1SS370
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications z Low forward voltag...
Datasheet PDF File 1SS370 PDF File

1SS370
1SS370

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications z Low forward voltage : VF (2) = 0.
9V (typ.
) z Fast reverse recovery time : trr = 60ns (typ.
) z Small total capacitance : CT = 1.
5pF (typ.
) z Small package : SC-70 1SS370 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 250 200 300 100 2 100 125 −55∼125 V V mA mA A mW JEDEC ― JEITA °C TOSHIBA SC−70 1-2P1D °C Weight: 0.
006g (ty...


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