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1SS369

Part Number	1SS369
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward ...
Datasheet	1SS369 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.
97V (typ.
) Low reverse current: IR = 5µA (max) 1SS369 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage Reverse voltage VRM VR 45 40 Maximum (peak) forward current IFM 300 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P * 150 Junction temperature Tj 125 Storage temperature range Tstg −55∼125 Operating temperature range Topr −40∼100 * Mounted on a glass epoxy circuit board of 20 × 20 mm, Pad dimension of 4 × 4 mm.
Unit V V mA mA A mW °C JEDEC °C ...

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