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1SS368

Toshiba Semiconductor
Part Number 1SS368
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward vo...
Datasheet PDF File 1SS368 PDF File

1SS368
1SS368

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.
98V (typ.
) Fast reverse recovery time: trr = 1.
6ns (typ.
) Small total capacitance : CT = 0.
5pF (typ.
) 1SS368 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage VRM 85 Reverse voltage VR 80 Maximum (peak) forward current IFM 200 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P 150 * Junction temperature Tj 125 Storage temperature range Tstg −55∼125 * : Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Unit V V mA mA A JEDE...


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