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1SS362

Toshiba Semiconductor
Part Number 1SS362
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application z Small package z Low forwa...
Datasheet PDF File 1SS362 PDF File

1SS362
1SS362

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application z Small package z Low forward voltage : VF(3) = 0.
97 V (typ.
) z Fast reverse recovery time : trr = 1.
6 ns (typ.
) z Small total capacitance : CT = 0.
5 pF (typ.
) 1SS362 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 * mA Average forward current IO 80 * mA Surge current (10ms) IFSM 1* A Power dissipation P 100 mW Junction temperature Tj 125 °C SSM Storage temperature Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads...


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