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1SS361

Toshiba Semiconductor
Part Number 1SS361
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)...
Datasheet PDF File 1SS361 PDF File

1SS361
1SS361

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  Low forward voltage : VF (3) = 0.
90 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
)  Small total capacitance : CT = 0.
9 pF (typ.
) Note1: For detail information, please contact our sales.
1SS361 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 2, 4) 120 mW PD (Note 3) 100 Junc...


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