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1SS360F

Toshiba Semiconductor
Part Number 1SS360F
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small...
Datasheet PDF File 1SS360F PDF File

1SS360F
1SS360F

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF (3) = 0.
92V (typ.
) l Fast reverse recovery time : trr = 1.
6ns (typ.
) l Small total capacitance : CT = 2.
2pF (typ.
) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300 (*) 100 (*) 2 (*) 100 Junction temperature Tj 125 Storage temperature range Tstg −55~125 (*) Unit rating.
Total ra...


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