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1SS360

Toshiba Semiconductor
Part Number 1SS360
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application 1SS360 Unit: mm z Small pack...
Datasheet PDF File 1SS360 PDF File

1SS360
1SS360

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 Ultra High Speed Switching Application 1SS360 Unit: mm z Small package z Low forward voltage : VF = 0.
92V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 2.
2pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 300 * 100 * 2* 100 mA mA A mW Junction temperature Tj 125 °C JEDEC ― Storage temperature Tstg −55∼125 °C JEITA ― Note: Using continuously under heavy loads (e.
g.
the ap...


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