DatasheetsPDF.com

1SS357

Part Number	1SS357
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z L...
Datasheet	1SS357 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
54V (typ.
) : IR = 5μA (max) : SC-70 1SS357 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) VR IFM IO IFSM 40 V 300 mA 100 mA 1A Power dissipation P 200* mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the sig...

Similar Datasheet

1SS300 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS301 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS301 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS302 Diode - Toshiba Semiconductor
1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS - Guangdong Kexin Industrial
1SS302A Silicon Epitaxial Planar Switching Diodes - Toshiba
1SS306 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS307 Diode - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)