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1SS352

Toshiba Semiconductor
Part Number 1SS352
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application 1SS352 Unit: mm z Small pack...
Datasheet PDF File 1SS352 PDF File

1SS352
1SS352

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application 1SS352 Unit: mm z Small package z Low forward voltage : VF (3) = 0.
98V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 0.
5pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 200 100 1 200 (*) mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55~125 °C JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the a...


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