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1SS349

Part Number	1SS349
Manufacturer	Toshiba Semiconductor
Description	Silicon Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltag...
Datasheet	1SS349 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
49V (typ.
) : IR = 50μA (max) : SC−59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 3000 mA Average forward current Power dissipation IO 1000 mA P 200 mW Junction temperature Tj 125 °C Storage temperature Operating Temperature Tstg −55∼125 °C JEDEC Topr −40∼100 °C JEITA TD−236MOD SC−59 Note: Using continuously under heavy loads (e.
g.
the application of h...

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