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1SS348

Part Number	1SS348
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low fo...
Datasheet	1SS348 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
56V (typ.
) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current Power dissipation IO 100 mA P 200 mW Junction temperature Storage temperature Tj 125 °C Tstg −55~125 °C Operating Temperature Topr −40~100 °C JEDEC TD-236MOD Note: Using continuously under heavy loads (e.
g.
the application of high JEITA SC-59 temper...

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