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1SS344

Part Number	1SS344
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application 1SS344 Unit: mm z L...
Datasheet	1SS344 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application 1SS344 Unit: mm z Low forward voltage : VF (3) = 0.
50V (typ.
) z Fast reverse recovery time : trr = 20ns (typ.
) z High average forward current : IO = 0.
5A (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 1500 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 500 mA 5A 200 mW Junction temperature Tj 125 °C Storage temperature Operating Temperature Tstg −55~125 °C JEDEC Topr −40~100 °C EIAJ TD-236MOD SC-59 Note: Using c...

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