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1SS336

Toshiba Semiconductor
Part Number 1SS336
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small pack...
Datasheet PDF File 1SS336 PDF File

1SS336
1SS336

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.
84V (typ.
) z Fast reverse recovery time : trr = 7ns (typ.
) z Small total capacitance : CT = 7pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 600 * 200 * 6* 150 mA mA A mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55~150 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy lo...


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