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1SS321

Part Number	1SS321
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	www.DataSheet.co.kr 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switchi...
Datasheet	1SS321 PDF File

Overview

www.
DataSheet.
co.
kr 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF = 0.
42V (typ.
) : IR = 500nA (max) : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 12 10 150 (*) 50 (*) 1000 (*) 150 125 −55∼125 Unit V V mA mA mA mW °C °C JEDEC EIAJ SOT−23MOD SC−59 1−3G1F TOSHIBA Note: Using continuously under heavy loads (e.
g.
the applicati...

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