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1SS319

Part Number	1SS319
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Mar 23, 2005
Detailed Description	www.DataSheet.co.kr 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching z Low f...
Datasheet	1SS319 PDF File

Overview

www.
DataSheet.
co.
kr 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.
54V (typ.
) : IR = 5μA (max) : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO P Tj Tstg Rating 45 40 300 (*) 100 (*) 150 (*) 125 −55∼125 Unit V V mA mA mW °C °C JEDEC ― EIAJ SC−61 Note: Using continuously under heavy loads (e.
g.
the application of high 2 −3J1A TOSHIBA temperature/current/voltage and the sign...

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