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1SS308

Toshiba Semiconductor
Part Number 1SS308
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 1SS308 Ultra High Speed Switching Applications Unit: mm z Small p...
Datasheet PDF File 1SS308 PDF File

1SS308
1SS308

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 1SS308 Ultra High Speed Switching Applications Unit: mm z Small package : SC-74A z Low forward voltage : VF (3) = 0.
92V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 2.
2pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 80 300 (*) 100 (*) 2 (*) 200 125 −55 to 125 V V mA mA A mW °C °C Note: Using continuously under heavy loads (e.
g.
the appl...


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