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1SS306

Toshiba Semiconductor
Part Number 1SS306
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  L...
Datasheet PDF File 1SS306 PDF File

1SS306
1SS306

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) = 0.
90 V (typ.
)  Fast reverse recovery time : trr = 30 ns (typ.
)  Small total capacitance : CT = 1.
5 pF (typ.
) 1SS306 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature ...


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