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1SS301

Toshiba Semiconductor
Part Number 1SS301
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm  AEC-Q101 Q...
Datasheet PDF File 1SS301 PDF File

1SS301
1SS301

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm  AEC-Q101 Qualified (Note1)  Small package : SC-70  Low forward voltage : VF (3) = 0.
90 V (typ.
)  Fast reverse recovery time : trr = 1.
6 ns (typ.
)  Small total capacitance : CT = 0.
9 pF (typ.
) Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 2, 4) 200 mW PD (Note 3) 1...


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