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1SS294

Toshiba Semiconductor
Part Number 1SS294
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching  AEC-Q101 Qualified (No...
Datasheet PDF File 1SS294 PDF File

1SS294
1SS294

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage : VF (3) = 0.
54V (typ.
)  Low reverse surrent : IR = 5μA (max)  Small package : SC−59 Note1: For detail information, please contact to our sales.
1SS294 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range VRM 45 V VR 40 V IFM 300 mA IO 100 mA JEDEC TO−236MOD P 150 mW JEITA SC−59 Tj 125 °C TOSHIBA 2-3F1S Tstg −55 to ...


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