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1SS293

Toshiba Semiconductor
Part Number 1SS293
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low ...
Datasheet PDF File 1SS293 PDF File

1SS293
1SS293

Overview
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Low forward voltage Low reverse surrent Small package : VF (3) = 0.
54V (typ.
) : IR = 5µA (max) 1SS293 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating Unit 45 V 40 V 300 mA 100 mA 300 mW JEDEC 125 °C EIAJ −55~125 °C TOSHIBA Weight: 0.
13g ― SC−61 2−3J1A Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (...


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