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1SS250

Toshiba Semiconductor
Part Number 1SS250
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 High Voltage, High Speed Switching Application  Small package : S...
Datasheet PDF File 1SS250 PDF File

1SS250
1SS250

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 High Voltage, High Speed Switching Application  Small package : SC−59  Low forward voltage : VF (2) = 0.
90 V (typ.
)  Fast reverse recovery time : trr = 60 ns (max)  Small total capacitance : CT = 1.
5 pF (typ.
) 1SS250 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 2 A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperatu...


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