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1SS226

Toshiba Semiconductor
Part Number 1SS226
Manufacturer Toshiba Semiconductor
Description Switching Diodes
Published Mar 23, 2005
Detailed Description Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 q...
Datasheet PDF File 1SS226 PDF File

1SS226
1SS226

Overview
Switching Diodes Silicon Epitaxial Planar 1SS226 1.
Applications • Ultra-High-Speed Switching 2.
Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales.
3.
Packaging and Internal Circuit S-Mini 1SS226 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-09 2022-11-22 Rev.
7.
0 1SS226 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current Average rectified current IFM (Note 1) IO (Note 1) 300 mA 100 Power...


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