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1SS200

Toshiba Semiconductor
Part Number 1SS200
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forwar...
Datasheet PDF File 1SS200 PDF File

1SS200
1SS200

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.
92V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 2.
2pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 (*) 2 (*) 200 mA A mW Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the a...


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