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1SS196

Toshiba Semiconductor
Part Number 1SS196
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Planar Type Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm  AEC-Q101 Q...
Datasheet PDF File 1SS196 PDF File

1SS196
1SS196

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm  AEC-Q101 Qualified (Note1)  Small package: SC-59  Low forward voltage: VF (3) = 0.
90 V (typ.
)  Fast reverse recovery time: trr = 1.
6 ns (typ.
)  Small total capacitance: CT = 0.
9 pF (typ.
) Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation PD (Note 2, 4) 200 mW PD (Note 3) 150 Junction te...


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