DatasheetsPDF.com

1SS193

Part Number	1SS193
Manufacturer	Toshiba Semiconductor
Description	Silicon Epitaxial Planar Type Diode
Published	Mar 23, 2005
Detailed Description	TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)...
Datasheet	1SS193 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package : SC-59  Low forward voltage : VF (3) = 0.
9V (typ.
)  Fast reverse recovery time : trr = 1.
6ns (typ.
)  Small total capacitance : CT = 0.
9pF (typ.
) Note1: For detail information, please contact to our sales.
1SS193 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 85 V 80 V 300 mA 100 mA 2 ...

Similar Datasheet

1SS101 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS101 Mixer Diode - NEC
1SS104 SILICON DIODE - Toshiba Semiconductor
1SS106 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH
1SS106 Silicon Schottky Barrier Diode - Renesas
1SS106 SMALL SIGNAL SCHOTTKY DIODES - JINAN JINGHENG ELECTRONICS
1SS108 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS110 Silicon Diode - Hitachi Semiconductor
1SS110 Switching Diode - Leshan Radio Company

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)