NCE N-Channel Super Trench Power MOSFET
Description
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ncepower.
com
Pb Free Product
NCEP85T25T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS =85V,ID =250A RDS(ON) <2.
8mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested
Application
● DC/DC Converter ● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP85T25T
NCEP85T25T
TO-247
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
85 ±20
Drain Current-Continuous
ID 250
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
ID (100℃)
IDM PD
EAS
TJ,TSTG
180 800 300
2 1700 -55 To 175
Quantity -
Unit
V V A A A W W/℃ mJ ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.
5 ℃/W
Wuxi NCE Power Semiconductor Co.
, Ltd
Page 1
v1.
0
http://www.
ncepower.
com
Pb Free Product
NCEP85T25T
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3)
BVDSS IDSS IGSS
VGS=0V ID=250μA VDS=85V,VGS=0V VGS=±20V,VDS=0V
Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteri...
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