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TH58NVG7T2ELA46

Part Number	TH58NVG7T2ELA46
Manufacturer	Toshiba
Description	128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM
Published	Dec 31, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TH58NVG7T2ELA46 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (4G × ...
Datasheet	TH58NVG7T2ELA46 PDF File

Overview

TOSHIBA CONFIDENTIAL TH58NVG7T2ELA46 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (4G × 8 BIT x 4) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TH58NVG7T2E is a single 3.
3 V 128 Gbit (145,572,102,144bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 192 pages × 2780 blocks × 4.
The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments.
The Erase operation is implemented in a single block unit (1536 Kbytes + 70.
5 Kbytes:8568 bytes x 192 pages).
The TH58NVG7T2E is a serial-type memor...

Similar Datasheet

TH58NVG7T2ELA46 128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM - Toshiba

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