Silicon P-Channel MOSFET
Description
2SJ412
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ412
DC-DC Converter, Relay Drive and Motor Drive Applications
• 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.
15 Ω (typ.
) • High forward transfer admittance: |Yfs| = 7.
7 S (typ.
) • Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−100 −100 ±20 −16 −64
60
292
−16 6
150 −55 to 150
V V V
A
W mJ A mJ °C °C
Note: Using continuously under heavy loads (e.
g.
the application of high
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.
5 g (typ.
)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient
Symbol
Rth (ch-c) Rth (ch-a)
Max 2.
08 83.
3
Unit °C/W °C/W
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.
5 g (typ.
)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.
84 mH, RG = 25 Ω, IAR = −16 A Note 3: Repetitive rating: pulse width limi...
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