Small Signal Transistor
Description
MPS2222A
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-226AA (TO-92)
0.
181 (4.
6)
0.
142 (3.
6)
min.
0.
492 (12.
5) 0.
181 (4.
6)
max.
∅ 0.
022 (0.
55)
0.
098 (2.
5)
Dimensions in inches and (millimeters)
Bottom View
Features
• NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
• On special request, this transistor is also manufactured in the pin configuration TO-18.
• This transistor is also available in the SOT-23 case with the type designation MMBT2222A.
Mechanical Data
Case: TO-92 Plastic Package Weight: approx.
0.
18g Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag.
, 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.
0
V
Collector Current
IC 600 mA
Power Dissipation
TA = 25°C Derate above 25°C
Ptot
625 mW 5.
0 mW/°C
Power Dissipation
TC = 25°C Derate above 25°C
Ptot
1.
5 W 12 mW/°C
Thermal Resistance Junction to Ambient Air
RΘJA
200 °C/W
Thermal Resistance Junction to Case
RΘJC
83.
3 °C/W
Junction Temperature
Tj 150 °C
Storage Temperature Range
TS
–55 to +150
°C
Document Number 88231 10-May-02
www.
vishay.
com 1
MPS2222A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DC Current Gain
VCE = 10 V, IC = 0.
1 mA
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
hFE
VCE = 10 V, IC = 10 mA TA = -55°C
VCE = 10 V, IC = 150 mA(1)
VCE = 1.
0 V, IC = 150 mA(1)
VCE = 10 V, IC = 500 mA(1)
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage(1)
V(BR)CBO V(BR)CEO
IC = 10 µA, IE = 0 IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA,...
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