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A1163

Toshiba Semiconductor
Part Number A1163
Manufacturer Toshiba Semiconductor
Description 2SA1163
Published Dec 8, 2015
Detailed Description 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier ...
Datasheet PDF File A1163 PDF File

A1163
A1163

Overview
2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2713 • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA Collector power dissipation PC 150 mW Junction temperature Storage temperature range ...


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