InGaAs PIN PHOTODIODE
Description
LX3051 3 Gbs LX3050 10 Gbs LX3052 10Gbs 1x4 ARRAY InGaAs PIN PHOTODIODE
New Product Information and Sales Kit
Manufactured by: Microsemi Integrated Products
Garden Grove, CA
Telephone: 714-898-8121
More than solutions – enabling possibilities
WWW.
Microsemi .
COM
LX3050/1/2
InGaAs PIN PHOTODIODES
INTRODUCTION
CONFIDENTIAL INFORMATION This new product introduction guide is intended for use only by Microsemi’s sales people and authorized representatives and distributors.
This material can be adapted for customer presentations, but the sales strategy and summary [pricing, availability, etc.
] is confidential and should not be shown to customers
DESCRIPTION
Microsemi’s InGaAs Coplanar PIN Photodiode chips are ideal for high bandwidth 1310 and 1550 nm single-mode-fiber optical networking applications.
The device family offers superior responsivity performance and high bandwidth with large active area in single die and 1x4 array die.
The G-S-G coplanar waveguide allows very low cross-talk within the array.
The LX305X family of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly using either bond wire or flip chip configurations.
This device is ideal for manufacturers of optical receivers, transceiver, transponders, optical transmission modules, and combination PIN photo diode – transimpedance amplifier.
SALES KIT
Copyright © 2001 Rev.
1.
0 6/16/03
New Product Information and Sales Kit
Page 2
LX3050/1/2
InGaAs PIN PHOTODIODES
KEY PRODUCT INFORMATION
BLOCK DIAGRAM
LX3051
LX3050
WWW.
Microsemi .
COM
LX3052
KEY FEATURES
LX3051 single die, 3 Gbs, 80µm active area LX3050 single die, 10 Gbs, 32µm active area LX3052 1x4 array die, 10 Gbs, 32µm active area Coplanar Waveguide, 50 ohm characteristic impedance High Responsivity Low Dark Current High Bandwidth Anode/Cathode on illuminated Side 125µm Pad pitch Die good for bond wire or flip chip applications Die good for non-hermetic packaging (passed ...
Similar Datasheet
