Power-Transistor - Infineon Technologies
Description
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested
IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.
2 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N0403 3N0403 3N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 80
80
320 526 ±20 188 -55 .
.
.
+175 55/175/56
Unit A
mJ V W °C
Rev.
1.
0
page 1
2007-05-03
IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 0.
8 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=120 µA
2.
1
3.
0
4.
0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V, T j=25 °C
-
-
1 µA
Gate-source leakage current
I GSS
V DS=40 V, V GS=0 V, T j=125 °C2)
V GS=20 V, V DS=0 V
-
- 100 - 100 nA
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=80 A
- 2.
8 3.
5 mΩ
V GS=10 V, I D=80 A, SMD version
-
2.
5 3.
2
Rev.
1.
0
page 2
2007-05-03
Parameter
Dynamic characteristics2) Input capaci...
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