Power-Transistor
Description
BSC016N03LS G
OptiMOS™3 Power-MOSFET
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications
• N-channel
Product Summary V DS R DS(on),max ID
30 V 1.
6 mΩ 100 A
PG-TDSON-8
• Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant;
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC016N03LS G
PG-TDSON-8 016N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22
V GS=4.
5 V, T C=25 °C
V GS=4.
5 V, T C=100 °C
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse I AS E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=50 A, R GS=25 Ω
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C
100 100
32 400 50 290 mJ
6 kV/µs ±20 V
Rev.
1.
28
page 1
2009-10-22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC016N03LS G
Value 125
2.
5
-55 .
.
.
150 55/150/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC
Device on PCB
R thJA
bottom top 6 cm2 cooling area2)
-
- 1 K/W - 18 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V, T j=25 °C
-
0.
1
1 µA
V D...
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