N-Channel Enhancement Mode MOS Transistor
Description
Product Bulletin HCT7000M January 1996
N-Channel Enhancement Mode MOS Transistor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Features
• 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23
MOSFETS
Description
The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package.
Electrical characteristics are similar to those of the JEDEC 2N7000.
The pinout and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages.
Absolute Maximum Ratings
Drain-Source Voltage .
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60 V Gate-Source Voltage .
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±40 V Drain Current .
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200 mA Power Dissipation (TA = 25o C) .
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300 mW Power Dissipation (TS(1) = 25o C) .
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600 mW(2) Operating and Storage Temperature .
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-55o C to +150o C Thermal Resistance R∅ JC .
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100o C/W Thermal Resistance R∅ JA .
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583o C/W
Notes: (1) TS = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers.
It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
The HCT7000M is available processed to TX and TXV levels per MIL-PRF19500.
Order HCT7000MTX or HCT7000MTXV.
Typical screening and lot acceptance tests are provided on page 13-4.
TX and TXV products receive a VGS HTRB at 24 V for 48 hrs.
at 150o C and a VDS HTRB at...
Similar Datasheet
