Low Capacitance TVS Array
Description
*RoHS COMPLIANT
Features
■ RoHS compliant* ■ Protects up to four I/O ports ■ Bidirectional configuration ■ ESD protection ■ Low capacitance: 6 pF
Applications
■ Ethernet - 10/100/1000 Base T ■ Personal digital assistants ■ Handheld electronics ■ Cellular phones ■ Video cards
CDNBS08-SLVU2.
8-8 - Low Capacitance TVS Array
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Peak Pulse Current (tp= 8/20 µs) Peak Pulse Power (tp= 8/20 µs) 1 Working Voltage
IPP PPP VWM
Breakdown Voltage @ 1 mA Leakage Current @ VWM Capacitance @ 0 V, 1 MHz
VBR ID C
3.
0
Snapback Voltage @ 50 mA
2.
8
ESD Protection per IEC 61000-4-2 Contact Discharge Air Discharge
ESD
±8 ±15
EFT Protection per IEC 61000-4-4 @ 5/50 ns
EFT
Surge Protection per IEC 61000-4-5
Clamping Voltage @ 8/20 µs
@ IP = 5 A 2
@ IP = 24 A 2 @ IPP = 30 A 2
Notes: 1.
See Peak Pulse Power vs.
Pulse Time.
2.
Each differential line pair.
VC
VC VC
Nom.
6
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Junction Temperature Range Storage Temperature Range
Symbol TJ
TSTG
Min.
-55 -55
Nom.
+25 +25
8765
1234
Max.
30 600 2.
8 1.
0
60 8.
5 15 17
Unit A W V V µA pF V
kV
A
V V V
Max.
+125 +150
Unit °C °C
*RoHS Directive 2002/95/EC Jan.
27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without n...
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