N-channel Power MOSFET
Description
STL100N10F7
N-channel 100 V, 0.
0062 Ω typ.
, 19 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2 3
4
PowerFLAT™ 5x6
Figure 1.
Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code STL100N10F7
VDSS
RDS(on) max
ID
PTOT
100 V 0.
0073 Ω 19 A 5 W
• Ultra low on-resistance • 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
S(1, 2, 3)
12 34 Top View
AM15540v2
Order code STL100N10F7
Table 1.
Device summary
Marking
Package
100N10F7
PowerFLAT™ 5x6
Packaging Tape and reel
July 2013
This is information on a product in full production.
DocID023656 Rev 4
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Contents
Contents
STL100N10F7
1 Electrical ratings .
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2 Electrical characteristics .
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2.
1 Electrical characteristics (curves)
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3 Test circuits .
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4 Package mechanical data .
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5 Packaging mechanical data .
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6 Revision history .
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2/16 DocID023656 Rev 4
STL100N10F7
1 Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS ID(1) ID (1) ID(2) ID (2) IDM(2)(3) PTOT(1) PTOT (2)
Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (continuous) at Tpcb = ...
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