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TC58NVG2S0HTAI0

Part Number	TC58NVG2S0HTAI0
Manufacturer	Toshiba
Description	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Published	Oct 19, 2015
Detailed Description	TC58NVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NVG2S0HTAI0 PDF File

Overview

TC58NVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0HTAI0 is a single 3.
3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TC58NVG2S0HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and d...

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