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TH58NYG4S0FBAID

Part Number	TH58NYG4S0FBAID
Manufacturer	Toshiba
Description	16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Published	Oct 19, 2015
Detailed Description	TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PRO...
Datasheet	TH58NYG4S0FBAID PDF File

Overview

TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NYG4S0F is a single 1.
8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 14.
5 Kbytes: 4328 bytes × 64 pages).
The TH58NYG4S0F is a serial-type memory device which utilizes the I/O pins for both address...

Similar Datasheet

TH58NYG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM - Toshiba

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