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TC58NYG0S3HBAI4

Part Number	TC58NYG0S3HBAI4
Manufacturer	Toshiba
Description	1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
Published	Oct 19, 2015
Detailed Description	TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58NYG0S3HBAI4 PDF File

Overview

TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.
8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.
The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: 2176 bytes  64 pages).
The TC58NYG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data i...

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TC58NYG0S3HBAI4 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM - Toshiba

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