IGBT - International Rectifier
Description
AUTOMOTIVE GRADE
PD - 97619
AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features
• NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability • Lead-Free, RoHS Compliant • Automotive Qualified*
Applications • PFC and ZVS SMPS Circuits • DC/DC Converter Charger
Benefits • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150KHz
C
G E
n-channel
VCES = 600V VCE(on) typ.
= 1.
85V @ VGE = 15V IC = 22A
Equivalent MOSFET Parameters
RCE(on) typ.
= 84mΩ ID (FET equivalent) = 35A
C
G Gate
E C G
TO-247AD AUIRGP35B60PD-E
C Collector
E Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.
Fig.
C.
T.
4)
dClamped Inductive Load Current
Diode Continous Forward Current Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec.
600 60 34 120 120 40 15 60 ±20 308 123 -55 ...
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