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TK11S10N1L

Toshiba
Part Number TK11S10N1L
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Sep 16, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Reg...
Datasheet PDF File TK11S10N1L PDF File

TK11S10N1L
TK11S10N1L


Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1.
Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-07 2020-06-24 Rev.
4.
0 TK11S10N1L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit ...



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