N-channel Power MOSFET
Description
STP9NM60 STD9NM60 - STD9NM60-1
N-CHANNEL 600V - 0.
55Ω - 8.
3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET
TARGET DATA
TYPE
VDSS RDS(on)
ID
Pw
STP9NM60 STD9NM60 STD9NM60-1
600 V 600 V 600 V
< 0.
60 Ω < 0.
60 Ω < 0.
60 Ω
8.
3 A 8.
3 A 8.
3 A
100 W 100 W 100 W
s TYPICAL RDS(on) = 0.
55 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE
CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
TO-220
IPAK
3
2 1
3 1 DPAK
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE STP9NM60
STD9NM60T4 STD9NM60-1
MARKING P9NM60 D9NM60 D9NM60
June 2003
PACKAGE TO-220 DPAK IPAK
PACKAGING TUBE
TAPE & REEL TUBE
1/9
STP9NM60 / STD9NM60 / STD9NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤7A, di/dt ≤400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value 600 600 ± 30 8.
3 5.
2 33.
2 100 0.
8 15
-65 to 150
Unit V V V A A A W
W/°C V/ns
°C
THERMAL DATA
Rthj...
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