Bias Resistor Transistor
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC Pd Tj Tstg
Limits
50 −10 to +12
500 200 150 −55 to +150
Unit
V V mA mW C C
LDTD123ELT1G
3 1
2
SOT-23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123ELT1G
F22
2.
2 2.
2 3000/Tape & Reel
LDTD123ELT3G
F22
2.
2 2.
2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency ∗Characteristics of built-in transistor.
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗
Min.
− 3 − − − 39
1.
54 0.
8 −
Typ.
− − 0.
1 − − − 2.
2 1
200
Max.
0.
5 − 0.
3 3.
8 0.
5 − 2.
86 1.
2 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=5V, IO=100µA VO=0.
3V, IO=20mA IO/II=50mA/2.
5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA
− − VCE=10V, IE= −50mA, f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTD123ELT1G
INPUT VOLTAGE : VI(on) (V)
zElectrical characteristic curves
100
VO=0.
3V
50
20 10
5
2 1 500m
Ta= −40 C 25 C
100 C
200m
100m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.
1 Input voltage vs.
output current (ON character...
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