Bias Resistor Transistor
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Symbol
VCC
Input voltage
VIN
Output current
IO IC(Max.
)
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
Limits
−50 −12 to +10
−100 −100
200 150 −55 to +150
Unit V V mA mA
mW °C °C
LDTA123ELT1G
3
1 2 SOT–23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA123ELT1G
A6H
2.
2 2.
2 3000/Tape & Reel
LDTA123ELT3G
A6H
2.
2 2.
2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
∗ Characteristics of built-in transistor
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT ∗
Min.
− −3 − − − 20
1.
54 0.
8 −
Typ.
− −
−0.
1 − − − 2.
2 1
250
Max.
−0.
5
− −0.
3 −3.
8 −0.
5
− 2.
86 1.
2
−
Unit
V
V mA µA − kΩ − MHz
Conditions VCC=−5V, IO=−100µA VO=−0.
3V, IO=−20mA IO/II=−10mA/−0.
5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−20mA
− − VCE=−10V, IE=5mA, f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTA123EWT1G
INPUT VOLTAGE : VI(on) (V)
zElectrical characteristic curves
100 VO=−0.
3V
50
20 10
Ta=−40°C 5 25°C
100°C 2
1 500m
200m 100m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
OUTPUT CURRENT : IO (A)
F...
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