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RJK6024DP3-A0

Renesas Technology

High Speed Power Switching MOS FET


Description
RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain...



Renesas Technology

RJK6024DP3-A0

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