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DSR07S30U

Toshiba Semiconductor
Part Number DSR07S30U
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 25, 2015
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR07S30U DSR07S30U High Speed Switching Application Unit: mm ...
Datasheet PDF File DSR07S30U PDF File

DSR07S30U
DSR07S30U

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR07S30U DSR07S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 700 ＊ 5 125 −55 to 125 V mA A °C °C *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditio...


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