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DSR05S30CTB

Toshiba Semiconductor
Part Number DSR05S30CTB
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 25, 2015
Detailed Description DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: m...
Datasheet PDF File DSR05S30CTB PDF File

DSR05S30CTB
DSR05S30CTB

Overview
DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.
25±0.
02 0.
65±0.
02 Absolute Maximum Ratings (Ta = 25°C) 0.
7±0.
02 1.
2±0.
05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500＊ 5 125 −55 to 125 V mA A °C °C 0.
05±0.
03 0.
8±0.
05 0.
05±0.
03 0.
38+-00.
.
0023 *: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in tempe...


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