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DSR01S30SC

Toshiba Semiconductor
Part Number DSR01S30SC
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Type Diode
Published Jul 25, 2015
Detailed Description DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: m...
Datasheet PDF File DSR01S30SC PDF File

DSR01S30SC
DSR01S30SC

Overview
DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.
1 9±0.
02 Absolute Maximum Ratings (Ta = 25°C) ２ 0.
025±0.
015 0.
62 ±0.
03 0.
3 8 Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 100 * 2 125 −55 to 125 *: Mounted on a glass-epoxy circuit board of 20 mm× 20 mm, pad dimensions of 4 mm× 4 mm.
V mA A °C °C １ 0 .
32±0.
03 0.
3±0.
03 0.
19±0.
02 0.
27±0.
02 0.
025±0.
015 １： CATHODE ２： ANODE Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significa...


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